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We have access to a
range of facilities for growth of thin films and novel materials.
UHV evaporation system (The Thirteener)
A load-locked, cryo- and ion-pumped vacuum system with base pressure of
~10-10 Torr, designed for co-deposition of two materials via
thermal and e-beam evaporation. Features relatively long
sample-to-source distance with the sample directly above the e-beam pocket
for improved reliability in nanoscale liftoff lithography. Substrate
size up to a 3" wafer.
Veeco v401 ("she's old, but she'll
Simple HV thermal evaporation system capable of depositing up to 4
different metals sequentially.
Two additional thermal evaporators, and RF sputtering system.
Other Facilities in DU Physics
HV 7-target thin film heterostructure growth system (Fan Research Group)
A cryopumped, load-locked HV system with seven installed 2" sputter
guns allows co-sputtering of up to four targets simultaneously in Ar or O2
gas. The substrate can be RF biased and also heated to 850o C.
The chamber is also equipped with an ion milling source for performing dry
etching, which will be essential for varying the nature of interfaces and
improving charge and spin transport between metal layers in NLSVs and
other structures (above: Prof Fan and URA during system installation).